The device is a single high-side MOSFET driver with an onboard boost supply to drive an N-channel MOSFET gate above source. It features an integrated charge pump/boost and non-inverting output stage capable of sourcing/sinking hundreds of milliamps. Typical external components include a bootstrap or small inductor for the boost and bypass capacitors at VCC.
Targeting 12 V/24 V system needs, the operating range covers approximately 3–36 V. Common use cases include battery protection switches, high-side load switching, and compact back-to-back MOSFET protection topologies for reverse-current blocking with low RDS(on) conduction.
Key electrical specs define suitability and must be measured consistently. We report VCC operating range, gate-drive amplitude, peak currents, and propagation delay.
Repeatable test procedures yield comparable metrics. Use a high-speed scope with low-inductance ground springs and define VCC and DUT MOSFET RDS(on). Capture propagation delay by applying a fast input transition and measuring crossing times.
Back-to-back N-channel MOSFETs provide low conduction loss and reverse-current blocking. The driver’s ability to produce Vgate above source achieves low RDS(on) at typical voltages.




